(PhysOrg.com) -- Toshiba Corporation today announced that it has developed a breakthrough technology for steep channel impurity distribution that delivers a solution to a key problem for 20nm ...
KYOTO, Japan — Intel Corp. researchers have provided a peek at a transistor with a gate length measuring just 20 nanometers, which Intel expects to put into production in 2007 when its microprocessors ...
Intel is in production with several 65-nm processors now, creating an inventory of commercial microprocessor products that will begin shipping early next year. At the IEDM conference, Intel showed die ...
The transition from finFET technology to Gate-All-Around (GAA) technology helps to reduce transistor variability and resume channel length scaling. It also brings several new challenges in terms of ...
AUSTIN, Texas — Intel Corp. and Texas Instruments Inc. process technologists have reached into their bags of “strain engineering” tricks for 90-nm silicon, techniques that deliver significant ...
Some results have been hidden because they may be inaccessible to you
Show inaccessible results