The 5th generation SiC MOSFETs optimized for high-efficiency power applications. Reducing On-Resistance at High Temperatures ...

Given the maturity of MOSFETs, selecting one for your next design may seem deceptively simple. Engineers are familiar with the figures of merit on a MOSFET data sheet. Selecting a MOSFET requires the ...

This application note presents the MOSFET/IGBT drivers theory and its applications. The document describes an introduction of the MOSFET and IGBT technology, the types of drivers, isolation techniques ...

Wide-bandgap (WBG) technologies, such as gallium-nitride (GaN) devices and silicon-carbide (SiC) MOSFETs, have recently made their way to electrified powertrain (e-powertrain) applications. These ...

International Rectifier announces an automotive DirectFET2 power MOSFET chipset optimized for dc-dc applications used in internal combustion engine (ICE) cars, hybrid, and electric vehicles.

Cree, one of the market leaders in silicon carbide (SiC) power electronics, introduced new Wolfspeed 650V SiC MOSFETs, which are envisioned for applications where efficiency is a key priority, ...

Traditional solutions often rely on two large MOSFETs to meet stringent specs -- 20A current rating, 28-30V breakdown voltage, and less than or equal to 5 milliohms ON-resistance -- resulting in ...

TOKYO--(BUSINESS WIRE)--Toshiba Corporation’s (TOKYO:6502) Semiconductor & Storage Products Company today announced the launch of a -40V P-ch power MOSFET for automobile applications. The latest ...

ROHM has developed a 30V N-channel MOSFET, the AW2K21, in a common-source configuration that achieves an ON-resistance of 2.0mΩ (typ.) in a compact 2.0mm × 2.0mm package. The AW2K21 has adopted a ...

DURHAM, N.C.--(BUSINESS WIRE)--In a move that heralds a performance revolution in energy efficient power electronics, Cree, Inc. (Nasdaq: CREE), a market leader in silicon carbide (SiC) power devices, ...